DS3832C-311 Datasheet | Dallas Semiconducotr

3.3V, 32Mb Advanced NV SRAM with Clock .maxim-ic. Features - - - - 3.0V to 3.6V operation Surface-mount nonvolatile (NV) RAM ball-grid array (BGA) module construction 1024k x 32 NV SRAM memory space and separate 64 x 8 real-time clock (RTC) memory space RTC maintains hundredths of seconds, seconds, minutes, hours, day, date, month, and year with leap-year pensation valid up to 2100 Removable backup power source provides more than eight years of timekeeping and data retention Read and write access times as fast as 100ns for NV SRAM memory and 200ns for RTC Automatic data protection during power loss Unlimited write-cycle endurance Low-power CMOS operation Battery monitor checks remaining capacity daily Industrial temperature range of -40°C to +85°C PACKAGE OUTLINE - - - - - - - Top View Bottom View Side View Side View DESCRIPTION The DS3832C-311 is a 1,048,576 x 32 advanced NV SRAM module with a 168-bump BGA pinout. The highly integrated DS3832C-311 contains a 64-byte RTC, four 8Mb SRAMs, and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the DS3832C311 makes use of an attached DS3802 battery cap to maintain clock information and preserve stored data while protecting that data by disallowing all memory accesses. Additionally, the DS3832C-311 has dedicated circuitry for monitoring the status of VCC and the status of an attached DS3802 battery cap. 1 of 18 PIN ASSIGNMENT (With Overlaid Package Outline) Figure 1 Because the DS3832C-311 has a total of 168 balls and only 76 active signals, balls are wired together into numbered groups, thus providing redundant connections for every signal. CEC OE WEC WE1 CE1 OEC CE3 A10 A11 A8 A9 A0 WE3 A1 A2 A3 A4 VCC 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 CEO 78 VCC BW 80 79 VBAT A15 A17 A13 A18 WE0 A16 A14 A12 A7 A6 A5 DQ7 DQ6 DQ5 RSV2 A19 DQ4 DQ0 DQ1 DQ2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17...